ISSCC 2005 / SESSION 21 / TD : RF TRENDS : ABOVE - IC INTEGRATION AND MM - WAVE / 21 . 8 21 . 8 A 114 GHz VCO in 0 . 13 μ m CMOS Technology
نویسندگان
چکیده
Millimeter wave (MMW) VCO design is motivated by the need for the ever-increasing frequency and bandwidth of communication applications. Most previously reported W-band (75 to 110GHz) and D-band (110 to 170GHz) VCOs are realized in InP HEMT or HBT technology [1-3] due to excellent transistor performances. Recently, some millimeter-wave Si-based VCOs were reported with high power consumption [5-9]. In this paper, a VCO topology based on CMOS technology for MMW applications with low power consumption is proposed. This MMIC is implemented in commercial 0.13μm 1P8M CMOS process with fT of 85GHz and fmax of 90GHz.
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